Multiband $d-p$ model and self-doping in the electronic structure of Ba$_2$IrO$_4$
Krzysztof Ro\'sciszewski, Andrzej M. Ole\'s

TL;DR
This paper develops a comprehensive multiband $d-p$ model for Ba$_2$IrO$_4$, revealing that self-doping and oxygen orbital participation are crucial for accurately describing its electronic and magnetic properties.
Contribution
The study introduces a detailed multiband $d-p$ model accounting for all relevant orbitals and interactions, highlighting the importance of self-doping and oxygen orbitals in iridates.
Findings
Self-doping reduces electron density below ionic predictions.
Weakly insulating antiferromagnetic ground state matches experiments.
Oxygen orbitals are significantly involved in electron delocalization.
Abstract
We introduce and investigate the multiband model describing a IrO layer (such as realized in BaIrO) where all orbitals per unit cell are partly occupied, i.e., and orbitals at iridium and orbitals at oxygen ions. The model takes into account anisotropic iridium-oxygen and oxygen-oxygen hopping processes, crystal-field splittings, spin-orbit coupling, and the on-site Coulomb interactions, both at iridium and at oxygen ions. We show that the predictions based on assumed idealized ionic configuration (with electrons per IrO unit) do not explain well the independent \textit{ab initio} data and the experimental data for BaIrO. Instead we find that the total electron density in the states is smaller, (). When we fix , the predictions for the model become more realistic…
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