Nonlocal transistor based on pure crossed Andreev reflection in a EuO-graphene/superconductor hybrid structure

TL;DR

This paper demonstrates a graphene-based superconducting device that achieves pure crossed Andreev reflection, enabling a highly tunable non-local spin-polarized transistor with oscillatory conductance behavior.

Contribution

It introduces a novel EuO-graphene/superconductor hybrid structure that isolates pure crossed Andreev reflection without parasitic effects, advancing non-local quantum transport control.

Findings

Pure crossed Andreev reflection achieved over wide bias range

Rapid on/off switching of non-local conductance

Oscillatory behavior linked to quasiparticle propagation

Abstract

We study the interband transport in a superconducting device composed of graphene with EuO-induced exchange interaction. We show that pure crossed Andreev reflection can be generated exclusively without the parasitic local Andreev reflection and elastic cotunnelling over a wide range of bias and Fermi levels in an EuO-graphene/superconductor/EuO-graphene device. The pure non-local conductance exhibits rapid on/off switching and oscillatory behavior when the Fermi levels in the normal and the superconducting leads are varied. The oscillation reflects the quasiparticle propagation in the superconducting lead and can be used as a tool to probe the subgap quasiparticle mode in superconducting graphene, which is inaccessible from the current-voltage characteristics. Our results suggest that the device can be used as a highly tunable transistor that operates purely in the non-local and spin-polarized transport regime.