The relation between optical instabilities and absorbed material in photoluminescence with [0001] InGaN single quantum well

TL;DR

This paper investigates how optical instabilities like memory effects and blinking in InGaN quantum wells are influenced by excitation wavelength and surface gas adsorption, providing a model that matches experimental observations.

Contribution

It introduces a model linking surface gas adsorption dynamics to optical instabilities in InGaN quantum wells, explaining the physical mechanisms behind these phenomena.

Findings

Optical memory and blinking are affected by excitation wavelength.

Gas adsorption on the surface influences optical response.

The proposed model accurately reproduces experimental data.

Abstract

In this letter, we aim to elucidate the physical mechanism of the so called optical memory effect and blinking phenomenon observed in InGaN single quantum wells (SQW). We have found that the optical response of both memory effect and blinking phenomenon, is affected by different excitation wavelengths and by the change of gas adsorption on the crystal surface. A model that reproduce dynamics of the coverage of absorbed gas molecules on the sample surface is given and compared with experimental data with evident match.