Behavioral modeling of stressed MOSFET

TL;DR

This paper extends the MOSFET drain current model to include piezoconductivity effects, enabling prediction of optimal channel orientation under stress for improved performance.

Contribution

It introduces a new stress-aware MOSFET model considering piezoconductance, aiding in optimizing transistor orientation based on stress analysis.

Findings

Model predicts optimal channel directions for stress conditions.

Analysis of piezoconductance coefficients on {100}, {110}, {111} planes.

Simplified models for specific stress states and planes.

Abstract

In this paper piezoconductivity phenomenon in MOSFET channel is discussed and extension of drain current model with possibility of stress consideration is proposed. Analysis of obtained model combined with examination of stress components inherent in the MOSFET channel as well as distributions of specific piezoconductance coefficients on a plane of channel can show which directions of transistor channel are desirable for improvement of MOSFET performances. This model gives possibility to predict optimal transistor channel orientation, for the given stress state in MOSFET channel. Possible simplification of this model is considered. In particular, stress state and significant piezoconductance coefficient distributions on planes {100}, {110} as well as {111} are analyzed. For assumed particular cases of stress state in the channel, final models of MOSFT for considered specific planes are given.