Structured Back Gates for High-Mobility Two-Dimensional Electron Systems Using Oxygen Ion Implantation

TL;DR

This paper introduces a scalable, reliable back gate patterning method using oxygen ion implantation in silicon-doped GaAs epilayers, compatible with high-mobility molecular beam epitaxy, enhancing device fabrication.

Contribution

The paper presents a novel oxygen ion implantation technique for back gate patterning that is simple, scalable, and preserves surface quality for high-mobility 2D electron systems.

Findings

Back gate structures effectively suppress conductance.

Method is compatible with high-mobility molecular beam epitaxy.

Technique is scalable for entire wafers.

Abstract

We present a new approach of back gate patterning that is compatible with the requirements of highest mobility molecular beam epitaxy. Contrary to common back gating techniques, our method is simple, reliable and can be scaled up for entire wafers. The back gate structures are defined by local oxygen implantation into a silicon doped GaAs epilayer, which suppresses the conductance without affecting the surface quality.