Wide bandwidth nanowire electromechanics on insulating substrates at room temperature
T. S. Abhilash, John P Mathew, Shamashis Sengupta, Mahesh R Gokhale,, Arnab Bhattacharya, Mandar M. Deshmukh

TL;DR
This paper demonstrates wide bandwidth nanowire electromechanical resonators on sapphire substrates at room temperature, enabling efficient actuation, detection, and thermal strain analysis through reduced parasitic capacitance.
Contribution
It introduces a method for fabricating nanowire resonators on insulating substrates that achieves wide bandwidth operation and allows thermal strain studies at room temperature.
Findings
Successful wide bandwidth actuation and detection of nanowire resonators
Observation of both in-plane and out-of-plane vibrational modes
Ability to study thermal strain variations due to heating
Abstract
We study InAs nanowire resonators fabricated on sapphire substrate with a local gate configuration. The key advantage of using an insulating sapphire substrate is that it results in a reduced parasitic capacitance thus allowing both wide bandwidth actuation and detection using a network analyzer as well as signal detection at room temperature. Both in-plane and out-of-plane vibrational modes of the nanowire can be driven and the non-linear response of the resonators studied. In addition this technique enables the study of variation of thermal strains due to heating in nanostructures
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