Resonance-enhanced waveguide-coupled silicon-germanium detector

TL;DR

This paper presents a silicon-germanium resonant waveguide photodetector with high responsivity and bandwidth, fabricated using standard silicon-on-insulator technology, suitable for integrated high-speed optical communication.

Contribution

It introduces a resonant waveguide-coupled SiGe photodiode with enhanced responsivity and bandwidth compatible with existing silicon electronics.

Findings

Responsivity of 0.55 A/W at 1176.9 nm

3 dB bandwidth of 5 GHz at -4 V bias

Dark current less than 20 pA

Abstract

A photodiode with 0.55$\pm$0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in silicon-germanium (SiGe) within a microring which is compatible with high-performance electronics. A 3 dB bandwidth of 5 GHz at -4 V bias is obtained with a dark current of less than 20 pA.