Prototype Active Silicon Sensor in 150 nm HR-CMOS Technology for ATLAS Inner Detector Upgrade

TL;DR

This paper presents a prototype active silicon sensor developed in 150 nm CMOS technology for the ATLAS detector upgrade, addressing challenges from increased luminosity at the LHC with simulation and measurement results.

Contribution

It introduces a novel active silicon sensor prototype in 150 nm CMOS technology specifically designed for high-energy physics applications.

Findings

Successful simulation and measurement of the prototype sensor

Evaluation of different pixel types in the design

Demonstration of suitability for ATLAS upgrade

Abstract

The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of commercial CMOS technologies. Currently ATLAS R&D programme is qualifying a few commercial technologies in terms of suitability for this task. In this paper a prototype designed in one of them (LFoundry 150 nm process) will be discussed. The chip architecture will be described, including different pixel types incorporated into the design, followed by simulation and measurement results.