Scaling like behaviour of resistivity observed in LaNiO_3 thin films grown on SrTiO_3 substrate by pulsed laser deposition

TL;DR

This paper investigates the temperature-dependent resistivity in LaNiO_3 thin films on SrTiO_3, revealing a universal scaling behavior linked to spin fluctuation scattering across a broad temperature range.

Contribution

It demonstrates a universal scaling law for resistivity in LaNiO_3 thin films, connecting temperature dependence to spin fluctuation effects, which was not previously established.

Findings

Resistivity data collapse onto a universal curve with scaling variable T/T_sf(d).

Resonant scattering by spin fluctuations influences resistivity.

Universal behavior observed across different film thicknesses.

Abstract

We discuss the origin of the temperature dependence of resistivity observed in highly oriented LaNiO_3 thin films (of thickness d) grown on SrTiO_3 substrate by a pulsed laser deposition technique. All the experimental data are found to collapse into a single universal curve [T/T_{sf}(d)]^{3/2} for the entire temperature interval (20K<T<300K) with T_{sf}(d) being the onset temperature for triggering a resonant scattering of conduction electrons by spin fluctuations in LaNiO_3/SrTiO_3 heterostructure.