The Chiral Anomaly and Ultrahigh Mobility in Crystalline HfTe5
Huichao Wang, Chao-Kai Li, Haiwen Liu, Jiaqiang Yan, Junfeng Wang, Jun, Liu, Ziquan Lin, Yanan Li, Yong Wang, Liang Li, David Mandrus, X. C. Xie, Ji, Feng, and Jian Wang
TL;DR
This study reports the first observation of chiral anomaly and ultrahigh mobility in HfTe5 crystals, highlighting its potential for topological electronic applications through electrical transport measurements.
Contribution
It provides the first experimental evidence of chiral anomaly and ultrahigh mobility in HfTe5, advancing understanding of its topological properties.
Findings
Negative magneto-resistivity observed with B//E
Quantitative fitting confirms chiral anomaly physics
Ultrahigh mobility and ultralow carrier density revealed
Abstract
HfTe5 is predicted to be a promising platform for studying topological phases. Here through an electrical transport study, we present the first observation of chiral anomaly and ultrahigh mobility in HfTe5 crystals. Negative magneto-resistivity in HfTe5 is observed when the external magnetic and electrical fields are parallel (B//E) and quickly disappears once B deviates from the direction of E. Quantitative fitting further confirms the chiral anomaly as the underlying physics. Moreover, by analyzing the conductivity tensors of longitudinal and Hall traces, ultrahigh mobility and ultralow carrier density are revealed in HfTe5, which paves the way for potential electronic applications.
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