Anisotropy, phonon modes, and free charge carrier parameters in monoclinic $\beta$-gallium oxide single crystals
M. Schubert, R. Korlacki, S. Knight, T. Hofmann, S., Sch\"oche, V. Darakchieva, E. Janz\'en, B. Monemar, D. Gogova and, Q.-T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, K. Goto, A., Kuramata, S. Yamakoshi, M. Higashiwaki

TL;DR
This study develops a dielectric tensor model for monoclinic materials, applies it to $eta$-Ga$_2$O$_3$ crystals, and determines phonon modes, dielectric constants, and free charge carrier parameters with high accuracy.
Contribution
The paper introduces a novel dielectric tensor model approach for monoclinic materials and applies it to $eta$-Ga$_2$O$_3$, providing detailed phonon and charge carrier parameters.
Findings
Identified all infrared and far-infrared active phonon modes in $eta$-Ga$_2$O$_3$
Derived monoclinic dielectric constants and generalized Lyddane-Sachs-Teller relation
Determined free charge carrier mobility and density parameters
Abstract
We derive a dielectric function tensor model approach to render the optical response of monoclinic and triclinic symmetry materials with multiple uncoupled infrared and farinfrared active modes. We apply our model approach to monoclinic -GaO single crystal samples. Surfaces cut under different angles from a bulk crystal, (010) and (01), are investigated by generalized spectroscopic ellipsometry within infrared and farinfrared spectral regions. We determine the frequency dependence of 4 independent -GaO Cartesian dielectric function tensor elements by matching large sets of experimental data using a point by point data inversion approach. From matching our monoclinic model to the obtained 4 dielectric function tensor components, we determine all infared and farinfrared active transverse optic phonon modes with and symmetry, and their…
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