Transport properties of AB stacked (Bernal) bilayer graphene on and without substrate within 2- and 4-band approximations
V.P. Gusynin, S.G. Sharapov, A.A. Reshetnyak

TL;DR
This paper calculates the longitudinal and Hall conductivities of AB-stacked bilayer graphene under various conditions, providing insights relevant for optoelectronic applications involving magnetic fields and substrates.
Contribution
It offers a comprehensive analysis of bilayer graphene's transport properties using 2- and 4-band models, including effects of substrates and magnetic fields, which is novel.
Findings
Conductivity behavior varies with frequency, chemical potential, and temperature.
Relations for Hall conductivities and Faraday/Kerr angles are derived.
Results inform optoelectronic device design involving bilayer graphene.
Abstract
We present the results of the calculations of longitudinal and Hall conductivities of AB-stacked bilayer graphene as a function of frequency, finite chemical potential, temperature both with and without magnetic fields on a base of 2- and 4-band effective models. The limited cases of the conductivities for direct current are derived. The relations being important for optoelectronic among Hall conductivities and Faraday, Kerr angles in the AB-bilayers samples in the electric and magnetic fields when the radiation passes across bilayer sheets on different kinds a substrate are obtained.
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