On-chip integrated, silicon-graphene plasmonic Schottky photodetector, with high responsivity and avalanche photogain

TL;DR

This paper presents an on-chip silicon-graphene plasmonic Schottky photodetector with high responsivity and avalanche gain, advancing integrated graphene-silicon photonics technology.

Contribution

It demonstrates a novel integrated photodetector with significantly improved responsivity and avalanche gain compared to traditional metal-silicon devices.

Findings

Responsivity of 85mA/W at 1.55 μm

Internal quantum efficiency of 7%

Avalanche gain of approximately 2 at 3V bias

Abstract

We report an on-chip integrated metal-graphene-silicon plasmonic Schottky photodetector with 85mA/W responsivity at 1.55 um and 7% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain~2. This paves the way to graphene integrated silicon photonics.