Electrical properties of RF sputtered PMN-PT thin films on LCMO buffered platinized glass substrate

TL;DR

This study investigates the fabrication and properties of PMN-PT ferroelectric thin films on LCMO buffered substrates, highlighting the effects of annealing temperature on their microstructure and electrical performance.

Contribution

It presents a systematic analysis of RF sputtered PMN-PT films on LCMO buffered glass, demonstrating phase control and property enhancement through thermal annealing.

Findings

Single phase PMN-PT achieved at 550-650°C annealing

High dielectric constant of 1300 at optimal conditions

Remnant polarization of 17 μC/cm² at 650°C

Abstract

Lead based relaxor ferroelectric thin films have been of technological importance due to excellent properties for several commercial applications. However subtleness and high cost of fabrication have plagued of these materials. In this work a systematic study of PMN-PT thin films grown on LCMO buffered platinized glass substrates has been undertaken. The films were grown at room temperature using RF magnetron sputtering. Single phase PMN-PT films could be obtained by exsitu thermal annealing in air for 2h at temperatures 550 and 650 degree C. The films annealed at temperatures lower than 550 degree C and films without buffer layer showed presence of pyrochlore. Effect of annealing temperature on the microstructure, dielectric and ferroelectric properties of the PMN-PT films has been investigated. Scanning electron micrographs of single phase PMN-PT films show a bimodal grain size distribution for films annealed at 550 and 650 degree C. A high dielectric constant of 1300 and a remnant polarization (2Pr) of 17micro C/cm2 were observed for film annealed at 650 degree C.