Temperature regimes of formation of nanometer periodic structure of adsorbed atoms in GaAs semiconductors under the action of laser irradiation

TL;DR

This paper develops a theoretical model to understand how laser irradiation influences the formation of nanometer-scale periodic structures of adsorbed atoms on GaAs surfaces, considering temperature, doping, and laser intensity.

Contribution

A new theoretical model describing the nucleation of nanoscale adatom structures on GaAs surfaces under laser irradiation is proposed.

Findings

Identifies temperature regimes for nanocluster formation.

Provides optimal parameters for creating surface periodic structures.

Connects adatom interactions with surface acoustic waves and electronic subsystems.

Abstract

The theory of nucleation of nanoscale structures of the adsorbed atoms (adatoms), which occurs as a result of the self-consistent interaction of adatoms with the surface acoustic wave and electronic subsystem is developed. Temperature regimes of formation of nanoclusters on ${n}$-GaAs surface under the action of laser irradiation are investigated. The offered model permits to choose optimal technological parameters (temperature, doping degree, intensity of laser irradiation) for the formation of the surface periodic defect-deformation structures under the action of laser irradiation.