Temperature dependent nonlinear Hall effect in macroscopic Si-MOS antidot array

TL;DR

This study reports a novel nonlinear Hall effect in macroscopic Si-MOSFET antidot arrays, influenced by temperature, magnetic field, and electron density, likely due to temperature-dependent resistivity and mobility variations.

Contribution

It introduces the observation of a temperature-dependent nonlinear Hall effect in macroscopic antidot arrays, providing a qualitative explanation for this new phenomenon.

Findings

Nonlinear Hall resistivity observed in Si-MOSFET antidot arrays.

Hall resistivity depends on temperature, magnetic field, and electron density.

Proposed explanation involves temperature-dependent resistivity and mobility in antidot shells.

Abstract

By measuring magnetoresistance and Hall effect in classically moderate perpendicular magnetic field in Si-MOSFET-type macroscopic antidot array we found a novel effect: nonlinear with field, temperature- and density-dependent Hall resistivity. We discuss qualitative explanation of the phenomenon and suggest that it might originate from strong temperature dependence of the resistivity and mobility in the shells of the antidots.