Electron-beam assisted selective growth of graphenic carbon thin films on SiO2/Si and quartz substrates

TL;DR

This paper demonstrates a novel method for selectively growing graphenic carbon thin films on SiO2/Si substrates using electron-beam exposure, which influences the growth rate and enables microstructure formation without full lithography.

Contribution

It introduces a new selective growth technique for graphenic carbon films via e-beam exposure, reducing the need for complex lithography processes.

Findings

E-beam exposure significantly affects carbon deposition rate.

Electrical and optical properties of films are characterized.

Microscopy and spectroscopy confirm selective growth and film quality.

Abstract

The first selective growth of graphenic carbon thin films on silicon dioxide is reported. A preliminary e-beam exposure of the substrate is found to strongly affect the process of such films growth. The emphasis is placed on the influence of substrate exposure on the rate of carbon deposition. The explanation of this effect is proposed. The data of electrical and optical measurements and the results of atomic force and scanning electron microscopy and Raman spectroscopy studies are reported. The results suggest that the selective growth of graphenic carbon thin films on an irradiated SiO2/Si substrate is a promising approach to producing a microstructure at the pre-synthesis step without full lithography process.