Monolayer MoS2/GaAs heterostructure self-driven photodetector with extremely high detectivity
Zhijuan Xu, Shisheng Lin, Xiaoqiang Li, Shengjiao Zhang, Zhiqian Wu,, Wenli Xu, Yanghua Lu, Sen Xu

TL;DR
This study demonstrates a high-performance, self-driven MoS2/GaAs heterostructure photodetector with extremely high detectivity, wide spectral response, and stability, achieved through interface engineering and doping techniques.
Contribution
It introduces a novel MoS2/GaAs heterojunction photodetector with record-high detectivity and enhanced responsivity via interface design and photo-induced doping.
Findings
Achieved responsivity of 446 mA/W at 635 nm
Detected a record-high detectivity of 1.9×10^14 Jones
Response time with rise/fall times of 17/31 μs
Abstract
Two dimensional material/semiconductor heterostructures offer alternative platforms for optoelectronic devices other than conventional Schottky and p-n junction devices. Herein, we use MoS2/GaAs heterojunction as a self-driven photodetector with wide response band width from ultraviolet to visible light, which exhibits high sensitivity to the incident light of 635 nm with responsivity as 446 mA/W and detectivity as 5.9*10^13 Jones (Jones = cm Hz1/2 W-1), respectively. Employing interface design by inserting h-BN and photo-induced doping by covering Si quantum dots on the device, the responsivity is increased to 419 mA/W for incident light of 635 nm. Distinctly, attributing to the low dark current of the MoS2/h-BN/GaAs sandwich structure based on the self-driven operation condition, the detectivity shows extremely high value of 1.9*10^14 Jones for incident light of 635 nm, which is…
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