Piezo Voltage Controlled Planar Hall Effect Devices
Bao Zhang, Kangkang Meng, Mei-Yin Yang, K. W. Edmonds, Hao Zhang,, Kai-Ming Cai, Yu Sheng, Nan Zhang, Yang Ji, Jian-Hua Zhao, Kai-You Wang

TL;DR
This paper demonstrates how piezoelectric voltages can control the planar Hall effect in ferromagnetic devices, enabling magnetic logic gates at room temperature without external magnetic fields, advancing spintronic technology.
Contribution
Introducing hybrid piezoelectric/ferromagnetic devices that use piezo voltages to control magnetization and Hall effect, enabling magnetic logic operations without external magnetic fields.
Findings
Piezo voltage can switch magnetization by 90 degrees in-plane.
Room temperature magnetic NOT and NOR gates are realized.
Magnetization control is achieved solely through piezo voltages.
Abstract
The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT) /ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90 in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.
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