The Derived Equivalent Circuit Model for Magnetized Anisotropic Graphene

TL;DR

This paper introduces a novel equivalent circuit model for magnetized anisotropic graphene, enabling more accurate and feasible analysis of its electromagnetic properties by incorporating anisotropy and dispersion effects.

Contribution

A new equivalent circuit model for magnetized anisotropic graphene based on EFIE, incorporating off-diagonal conductivity tensor components with CCVSs.

Findings

Model accurately captures anisotropic conductivity effects.

Benchmarking shows good agreement with numerical simulations.

Provides a practical circuit approach for dispersive and anisotropic materials.

Abstract

Due to the static magnetic field, the conductivity for graphene becomes a dispersive and anisotropic tensor, which complicates most modeling methodologies. In this paper, a novel equivalent circuit model is proposed for graphene with the magnetostatic bias based on the electric field integral equation (EFIE). To characterize the anisotropic property of the biased graphene, the resistive part of the unit circuit is replaced by a resistor in series with current control voltage sources (CCVSs). The CCVSs account for the off-diagonal parts of the surface conductivity tensor for the magnetized graphene. Furthermore, the definitions of the absorption cross section and the scattering cross section are revisited to make them feasible for derived circuit analysis. This proposed method is benchmarked with several numerical examples. This paper also provides a new equivalent circuit model to deal with dispersive and anisotropic materials.