Spin transport in molybdenum disulfide multilayer channel

TL;DR

This paper demonstrates electrical spin injection and detection in multilayer MoS2 channels, revealing significant spin relaxation suppression and long spin diffusion lengths, advancing spintronic applications of 2D materials.

Contribution

It provides the first experimental evidence of spin transport in multilayer MoS2, highlighting the role of localized states and long spin lifetimes for spintronic device development.

Findings

Observed ~1% magnetoresistance at low temperature

Identified hopping via localized states as key for MR

Measured long spin diffusion length (~235nm) and spin lifetime (~46ns)

Abstract

Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, demonstrating spin-transport through a semiconducting MoS2 channel is challenging. Here we demonstrate the electrical spin injection and detection in a multilayer MoS2 semiconducting channel. A magnetoresistance (MR) around 1% has been observed at low temperature through a 450nm long, 6 monolayer thick channel with a Co/MgO spin injector and detector. From a systematic study of the bias voltage, temperature and back-gate voltage dependence of MR, it is found that the hopping via localized states in the contact depletion region plays a key role for the observation of the two-terminal MR. Moreover, the electron spin-relaxation is found to be greatly suppressed in the multilayer MoS2 channel for in-plan spin injection. The underestimated long spin diffusion length (~235nm) and large spin lifetime (~46ns) open a new avenue for spintronic applications using multilayer transition metal dichalcogenides.