Chemical assembly of atomically thin transistors and circuits in a large scale

TL;DR

This paper demonstrates a scalable chemical method to assemble 2D heterostructures of MoS2 and graphene, enabling high-performance atomic transistors and logic circuits for advanced electronics.

Contribution

It introduces a large-scale, site-selective synthesis technique for 2D heterostructures, advancing the integration of atomic thin materials in electronic devices.

Findings

High transconductance (10 μS) achieved in 2D transistors

On-off ratio of 10^6 demonstrated in devices

Heterostructure NMOS inverter with gain up to 70

Abstract

Next-generation electronics calls for new materials beyond silicon for increased functionality, performance, and scaling in integrated circuits. Carbon nanotubes and semiconductor nanowires are at the forefront of these materials, but have challenges due to the complex fabrication techniques required for large-scale applications. Two-dimensional (2D) gapless graphene and semiconducting transition metal dichalcogenides (TMDCs) have emerged as promising electronic materials due to their atomic thickness, chemical stability and scalability. Difficulties in the assembly of 2D electronic structures arise in the precise spatial control over the metallic and semiconducting atomic thin films. Ultimately, this impedes the maturity of integrating atomic elements in modern electronics. Here, we report the large-scale spatially controlled synthesis of the single-layer semiconductor molybdenum disulfide (MoS2) laterally in contact with conductive graphene. Transition electron microscope (TEM) studies reveal that the single-layer MoS2 nucleates at the edge of the graphene, creating a lateral 2D heterostructure. We demonstrate such chemically assembled 2D atomic transistors exhibit high transconductance (10 uS), on-off ratios (10^6), and mobility (20 cm^2 V^-1 s^-1). We assemble 2D logic circuits, such as a heterostructure NMOS inverter with a high voltage gain, up to 70, enabled by the precise site selectivity from atomically thin conducting and semiconducting crystals. This scalable chemical assembly of 2D heterostructures may usher in a new era in two-dimensional electronic circuitry and computing.