Parallel Stitching of Two-Dimensional Materials

TL;DR

This paper presents a scalable chemical vapor deposition method for fabricating precisely aligned, large-scale two-dimensional heterostructures with diverse material combinations, advancing their integration into electronic devices.

Contribution

It introduces a novel seed-based CVD technique for large-scale, arbitrary-patterned 2D heterostructures with clean interfaces, enabling new applications in integrated circuits.

Findings

Successful synthesis of various 2D heterostructures

Large-scale fabrication with arbitrary patterns

Clean, well-aligned interfaces

Abstract

Diverse parallel stitched two-dimensional heterostructures are synthesized, including metal-semiconductor (graphene-MoS2), semiconductor-semiconductor (WS2-MoS2), and insulator-semiconductor (hBN-MoS2), directly through selective sowing of aromatic molecules as the seeds in chemical vapor deposition (CVD) method. Our methodology enables the large-scale fabrication of lateral heterostructures with arbitrary patterns, and clean and precisely aligned interfaces, which offers tremendous potential for its application in integrated circuits.