Gate-tunable diode and photovoltaic effect in an organic-2D layered material p-n junction

TL;DR

This paper demonstrates a gate-tunable organic-2D layered material p-n junction with diode and photovoltaic effects, showing promising efficiency and rectification for future optoelectronic devices.

Contribution

It introduces a novel organic-2D layered p-n junction with gate-tunable diode and photovoltaic functionalities, advancing flexible and tunable optoelectronic device design.

Findings

Diode rectification factor up to 10^4

Photoresponse with ~11% external quantum efficiency

Open circuit voltage up to 0.6 V and 0.7% power conversion efficiency

Abstract

The semiconducting p-n junction is a simple device structure with great relevance for electronic and optoelectronic applications. The successful integration of low-dimensional materials in electronic circuits has opened the way forward for producing gate-tunable p-n junctions. In that context, here we present an organic (Cu-phthalocyanine)-2D layered material (MoS2) hybrid p-n junction with both gate-tunable diode characteristics and photovoltaic effect. Our proof-of-principle devices show multifunctional properties with diode rectifying factors of up to 10^4, while under light exposure they exhibit photoresponse with a measured external quantum efficiency of ~ 11 %. As for their photovoltaic properties, we found open circuit voltages of up to 0.6 V and optical-to-electrical power conversion efficiency of 0.7 %. The extended catalogue of known organic semiconductors and two-dimensional materials offer the prospect for tailoring the properties and the performance of the resulting devices, making organic-2D p-n junctions promising candidates for future technological applications.