Narrow-linewidth homogeneous optical emitters in diamond nanostructures via silicon ion implantation

TL;DR

This paper introduces a silicon ion implantation method to create high-quality, narrow-linewidth SiV- centers in diamond nanostructures, enabling their integration into quantum photonic devices.

Contribution

The authors demonstrate a novel implantation technique producing SiV- centers with near-lifetime-limited linewidths and minimal inhomogeneous broadening, compatible with nanofabrication processes.

Findings

Implanted SiV- centers exhibit near-lifetime-limited linewidths.

Properties are maintained after nanofabrication.

Technique enables integration into nanophotonic devices.

Abstract

The negatively-charged silicon-vacancy ($\mathrm{SiV}^{-}$) center in diamond is a bright source of indistinguishable single photons and a useful resource in quantum information protocols. Until now, $\mathrm{SiV}^{-}$ centers with narrow optical linewidths and small inhomogeneous distributions of $\mathrm{SiV}^{-}$ transition frequencies have only been reported in samples doped with silicon during diamond growth. We present a technique for producing implanted $\mathrm{SiV}^{-}$ centers with nearly lifetime-limited optical linewidths and a small inhomogeneous distribution. These properties persist after nanofabrication, paving the way for incorporation of high-quality $\mathrm{SiV}^{-}$ centers into nanophotonic devices.