Electrically controlled spin-transistor operation in helical magnetic field

TL;DR

This paper proposes an electrically controlled spin transistor utilizing helical magnetic fields and Rashba spin-orbit coupling, where transistor switching is achieved through Landau-Zener transitions affecting spin-polarized electron backscattering.

Contribution

It introduces a novel spin transistor design controlled entirely by electric fields via Rashba coupling and magnetic field manipulation, enabling all-electric switching.

Findings

Transistor operation is driven by Landau-Zener transitions causing backscattering.

Switching between high and low resistance states is controlled electrically.

The device demonstrates potential for all-electric spintronic applications.

Abstract

A proposal of electrically controlled spin transistor in helical magnetic field is presented. In the proposed device, the transistor action is driven by the Landau-Zener transitions that lead to a backscattering of spin polarized electrons and switching the transistor into the high-resistance state (off state). The on/off state of the transistor can be controlled by the all-electric means using Rashba spin-orbit coupling that can be tuned by the voltages applied to the side electrodes.