Large anisotropy of electron and hole g factors in infrared-emitting InAs/InAlGaAs self-assembled quantum dots
V. V. Belykh, D. R. Yakovlev, J. J. Schindler, E. A. Zhukov, M. A., Semina, M. Yacob, J. P. Reithmaier, M. Benyoucef, M. Bayer

TL;DR
This study reveals significant anisotropy in electron and hole g factors in InAs/InAlGaAs quantum dots emitting at telecom wavelengths, with detailed tensor measurements and theoretical modeling of quantum dot parameters.
Contribution
It provides the first comprehensive measurement of all components of g-factor tensors in these quantum dots, including their spread, and offers a theoretical model to estimate quantum dot parameters from g-factor data.
Findings
Electron g factor varies from -1.63 to -2.52 between perpendicular and parallel directions.
Hole g factor anisotropy is even stronger, with values 0.64 and 2.29.
Out-of-plane g-factor spread correlates with spin dephasing times.
Abstract
A detailed study of the -factor anisotropy of electrons and holes in InAs/InAlGaAs self-assembled quantum dots emitting in the telecom spectral range of m (around 0.8 eV photon energy) is performed by time-resolved pump-probe ellipticity technique using a superconducting vector magnet. All components of the -factor tensors are measured, including their spread in the quantum dot (QD) ensemble. Surprisingly, the electron factor shows a large anisotropy changing from to between directions perpendicular and parallel to the dot growth axis, respectively, at an energy of 0.82 eV. The hole -factor anisotropy at this energy is even stronger: and . On the other hand, the in-plane anisotropies of electron and hole factors are small. The…
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