Hopping conductivity and insulator-metal transition in films of touching semiconductor nanocrystals
Han Fu, K. V. Reich, B. I. Shklovskii

TL;DR
This paper investigates the variable-range hopping conductivity and insulator-metal transition in semiconductor nanocrystal films, revealing three distinct phases of electron localization influenced by doping and disorder.
Contribution
It introduces a detailed model of electron transfer and localization in touching nanocrystal films, identifying three phases and predicting the insulator-metal transition.
Findings
Identification of three phases: insulator, oscillating insulator, blinking metal.
Localization length diverges at the critical doping concentration.
Experimental evidence supports the existence of the first two phases.
Abstract
This paper is focused on the the variable-range hopping of electrons in semiconductor nanocrystal (NC) films below the critical doping concentration at which it becomes metallic. The hopping conductivity is described by the Efros-Shklovskii law which depends on the localization length of electrons. We study how the localization length grows with the doping concentration in the film of touching NCs. For that we calculate the electron transfer matrix element between neighboring NCs for two models when NCs touch by small facets or just one point. We study two sources of disorder: variations of NC diameters and random Coulomb potentials originating from random numbers of donors in NCs. We use the ratio of to the disorder-induced NC level dispersion to find the localization length of electrons due to the multi-step elastic co-tunneling process. We found three…
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