Class of Rashba ferroelectrics in hexagonal semiconductors

TL;DR

This paper identifies hexagonal ferroelectric semiconductors as a new class of Rashba systems, demonstrating electrical control of spin textures and strain-induced topological phase transitions, with potential for novel spintronic applications.

Contribution

It introduces a new class of Rashba ferroelectrics in hexagonal semiconductors and shows how strain can induce topological phase transitions in these materials.

Findings

Identification of hexagonal ferroelectric semiconductors with large Rashba coefficients

Demonstration of strain-driven topological phase transition

Potential for controlling spin textures via ferroelectricity

Abstract

We present a class of Rashba systems in hexagonal semiconducting compounds, where an electrical control over spin-orbital texture is provided by their bulk ferroelectricity. Our first-principles calculations reveal a number of such materials with large Rashba coefficients. We, furthermore, show that strain can drive a topological phase transition in such materials, resulting in a ferroelectric topological insulating state. Our findings can open avenues for interplay between Rashba effect, ferroelectricity and topological phenomena.