Steady-State Thermal Analysis of an Integrated 160 GHz Balanced Quadrupler Based on Quasi-Vertical Schottky Diodes

TL;DR

This paper presents a thermal analysis of a 160 GHz balanced quadrupler using quasi-vertical Schottky diodes, employing finite element modeling and experimental thermal conductivity measurements to optimize heat sinking and reduce device temperature.

Contribution

It introduces a comprehensive thermal analysis combining simulation and experimental data for a high-frequency quadrupler, highlighting the impact of heat sinking on device temperature.

Findings

Maximum diode temperature of 64.9°C from simulation

Heat sinking with an extra beam lead reduces temperature to 41.0°C

Thermal conductivity measured via TDTR enhances model accuracy

Abstract

This work reports on a steady-state thermal analysis of a 160 GHz balanced quadrupler, based on a quasi-vertical varactor Schottky diode process, for high power applications. The chip is analyzed by solving the heat equation via the 3D finite element method. Time-Domain Thermoreflectance (TDTR) was used to measure the thermal conductivity of the different materials used in the model. A maximum anode temperature of 64.9 C was found from the simulation. The addition of an extra beam lead connected to the block, for heat sinking, was found to reduce this maximum temperature to 41.0 C.