Photoemission-based microelectronic devices

TL;DR

This paper demonstrates that engineered metasurfaces combined with low-power IR lasers can induce photoemission to create microelectronic devices like transistors and switches, potentially surpassing traditional semiconductor limitations.

Contribution

It introduces a novel approach using resonant metasurfaces and IR lasers to enable practical photoemission-based microelectronic devices, combining advantages of vacuum electronics with semiconductor integration.

Findings

Photoemission can be triggered by low-power IR lasers using engineered metasurfaces.

Feasible microelectronic devices such as transistors and switches can be realized with this method.

The approach offers potential for faster, more efficient microelectronics beyond traditional semiconductor limits.

Abstract

The vast majority of modern microelectronic devices rely on carriers within semiconductors due to their integrability. Therefore, the performance of these devices is limited due to natural semiconductor properties such as band gap and electron velocity. Replacing the semiconductor channel in conventional microelectronic devices with a gas or vacuum channel may scale their speed, wavelength, and power beyond what is available today. However, liberating electrons into gas/vacuum in a practical microelectronic device is quite challenging. It often requires heating, applying high voltages, or using lasers with short wavelengths or high powers. Here, we show that the interaction between an engineered resonant surface (metasurface) and a low-power infrared (IR) laser can cause enough photoemission (via electron tunneling) to implement feasible microelectronic devices such as transistors, switches, and modulators. Photoemission-based devices benefit from the advantages of gas-plasma/vacuum electronic devices while preserving the integrability of semiconductor-based devices.