Observation of coupling between zero- and two-dimensional semiconductor systems based on anomalous diamagnetic effects
Shuo Cao, Jing Tang, Yue Sun, Kai Peng, Yunan Gao, Yanhui Zhao,, Chenjiang Qian, Sibai Sun, Hassan Ali, Yuting Shao, Shiyao Wu, Feilong Song,, David A. Williams, Weidong Sheng, Kuijuan Jin, Xiulai Xu

TL;DR
This study observes strong coupling between a quantum dot and wetting layer via anomalous diamagnetic effects, revealing hybrid states with potential applications in quantum information processing.
Contribution
First direct observation of zero- and two-dimensional semiconductor coupling through diamagnetic shifts, demonstrating hybrid states in quantum dot-wetting layer systems.
Findings
Large positive diamagnetic coefficient in wetting layer-electron and quantum dot-hole states
Negative diamagnetic effect observed in recombination, stronger than in pure quantum dots
Wavefunction expansion explains the diamagnetic phenomena and coupling mechanism
Abstract
We report the direct observation of coupling between a single self-assembled InAs quantum dot and a wetting layer, based on strong diamagnetic shifts of many-body exciton states using magneto-photoluminescence spectroscopy. An extremely large positive diamagnetic coefficient is observed when an electron in the wetting layer combines with a hole in the quantum dot; the coefficient is nearly one order of magnitude larger than that of the exciton states confined in the quantum dots. Recombination of electrons with holes in a quantum dot of the coupled system leads to an unusual negative diamagnetic effect, which is five times stronger than that in a pure quantum dot system. This effect can be attributed to the expansion of the wavefunction of remaining electrons in the wetting layer or the spread of electrons in the excited states of the quantum dot to the wetting layer after…
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