Time Dependent Non-Equilibrium Ionization of Transition Region Lines Observed with IRIS
Juan Martinez-Sykora, Bart De Pontieu, Viggo H. Hansteen and, Boris V. Gudiksen

TL;DR
This study investigates the non-equilibrium ionization of silicon and oxygen in the solar atmosphere using IRIS observations and simulations, revealing that these lines are formed out of statistical equilibrium and depend on local conditions.
Contribution
It demonstrates the importance of non-equilibrium ionization effects in interpreting IRIS observations of solar transition region lines, supported by comparison with 2D MHD simulations.
Findings
Observed intensity ratios vary with solar region and features.
Non-equilibrium models better reproduce observed correlations.
Lines are formed out of statistical equilibrium.
Abstract
The properties of non-statistical equilibrium ionization of silicon and oxygen ions are analyzed in this work. We focus on four solar targets (quiet sun, coronal hole, plage, quiescent active region, AR, and flaring AR) as observed with the Interface Region Imaging Spectrograph (IRIS). IRIS is best suited for this work due to the high cadence (up to 0.5s), high spatial resolution (up to 0.32"), and high signal to noise ratios for O IV and Si IV. We find that the observed intensity ratio between lines of three times ionized silicon and oxygen ions depends on their total intensity and that this correlation varies depending on the region observed (quiet sun, coronal holes, plage or active regions) and on the specific observational objects present (spicules, dynamic loops, jets, micro-flares or umbra). In order to interpret the observations, we compare them with synthetic profiles taken…
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