Linear magnetoresistance in compensated graphene bilayer

TL;DR

This study demonstrates a nonsaturating linear magnetoresistance in charge-compensated bilayer graphene across a wide temperature range, explained by a two-fluid model involving electron-hole recombination and sample geometry effects.

Contribution

It introduces a phenomenological two-fluid model to explain linear magnetoresistance in bilayer graphene, moving beyond classical resistor network explanations.

Findings

Linear magnetoresistance observed from 1.5 to 150 K.

Effect disappears away from charge neutrality.

Qualitative agreement with two-fluid model.

Abstract

We report a nonsaturating linear magnetoresistance in charge-compensated bilayer graphene in a temperature range from 1.5 to 150 K. The observed linear magnetoresistance disappears away from charge neutrality ruling out the traditional explanation of the effect in terms of the classical random resistor network model. We show that experimental results qualitatively agree with a phenomenological two-fluid model taking into account electron-hole recombination and finite-size sample geometry.