Ballistic transport exceeding 28 \mu m in CVD grown graphene

TL;DR

This paper demonstrates that CVD-grown graphene fully encapsulated in hexagonal boron nitride exhibits ballistic transport over distances exceeding 28 micrometers, with high mobility and temperature resilience up to 200 K.

Contribution

It reports the achievement of long-range ballistic transport in CVD graphene with high mobility, using an advanced transfer method and encapsulation.

Findings

Ballistic transport over more than 28 μm in CVD graphene.

Carrier mobilities up to three million cm²/(Vs).

Ballistic behavior maintained up to 200 K.

Abstract

We report on ballistic transport over more than 28 \mu m in graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are fabricated by an advanced dry van-der-Waals transfer method and exhibit carrier mobilities of up to three million cm$^2$/(Vs). The ballistic nature of charge transport is probed by measuring the bend resistance in cross- and square-shaped devices. Temperature dependent measurements furthermore prove that ballistic transport is maintained exceeding 1 \mu m up to 200 K.