Negative to Positive Crossover of Magnetoresistance in Layered WS2 with Ohmic Contact

TL;DR

This study demonstrates ohmic contact formation on WS2 nanoflakes using FIB technology and reveals a temperature-dependent crossover of magnetoresistance from negative to positive, linked to carrier type transition.

Contribution

It introduces a FIB-based method for achieving ohmic contact on WS2 and uncovers magnetoresistance crossover behavior related to carrier type changes.

Findings

FIB-deposited Pt electrodes provide ohmic contact on WS2.

Temperature induces a negative to positive magnetoresistance crossover.

Carrier type transition correlates with magnetoresistance behavior.

Abstract

The discovery of graphene has ignited intensive investigation on two dimensional (2D) materials. Among them, transition metal dichalcogenide (TMDC), a typical representative, attracts much attention due to the excellent performance in field effect transistor (FET) related measurements and applications. Particularly, when TMDC eventually reaches few-layer dimension, a wide range of electronic and optical properties, in striking contrast to bulk samples, are detected. In this Letter, we synthesized single crystalline WS2 nanoflakes by physical vapor deposition (PVD) method and carried out a series of transport measurements of contact resistance and magnetoresistance. Focused ion beam (FIB) technology was applied to deposit Pt electrodes on WS2 flakes. Different from the electron beam lithography (EBL) fabricated electrodes, FIB-deposited leads exhibited ohmic contact, resolving the dilemma of Schottky barrier. Furthermore, a temperature-modulated negative-to-positive transition of magnetoresistance (MR) associated with a crossover of carrier type at similar temperature was demonstrated. Our work offers a pathway to optimize the contact for TMDC and reveals the magnetoresistance characteristics of WS2 flakes, which may stimulate further studies on TMDC and corresponding potential electronic and optoelectronic applications.