Electrical control of g-factors in a few-hole silicon nanowire MOSFET

TL;DR

This paper demonstrates electrical control of g-factors in a silicon nanowire MOSFET, revealing strong anisotropy and gate dependence that could enable fast, electrically-driven spin resonance for quantum computing.

Contribution

It introduces a silicon nanowire MOSFET as a platform for hole spin qubits with tunable g-factors, advancing solid-state quantum computation technology.

Findings

Observed strong anisotropy in g-factors.

Identified gate dependence of g-factors.

Predicted high Rabi frequencies for spin control.

Abstract

Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence, resulting from a reduced hyperfine interaction, and fast electrically driven qubit manipulation. Here we show that a silicon-nanowire field-effect transistor based on state-of-the-art silicon-on-insulator technology can be operated as a few-hole quantum dot. A detailed magnetotransport study of the first accessible hole reveals a g-factor with unexpectedly strong anisotropy and gate dependence. We infer that these two characteristics could enable an electrically-driven g-tensor-modulation spin resonance with Rabi frequencies exceeding several hundred MHz.