Field Effect Transistors with Sub-Micrometer Gate Lengths Fabricated from LaAlO$_3$-SrTiO$_3$-Based Heterostructures

TL;DR

This paper investigates short-channel effects in oxide field-effect transistors made from LaAlO3-SrTiO3 heterostructures, demonstrating the feasibility of fabricating nanoscale devices with functional properties similar to semiconductors.

Contribution

It presents the fabrication and analysis of sub-micrometer oxide transistors with gate lengths down to 60 nm, showing potential for nanoscale oxide electronics.

Findings

Channel-length modulation observed below 1 μm

Drain-induced barrier lowering detected in short channels

Functional devices fabricated with gate lengths as small as 60 nm

Abstract

The possible existence of short-channel effects in oxide field-effect transistors is investigated by exploring field-effect transistors with various gate lengths fabricated from LaAlO$_3$-SrTiO$_3$ heterostructures. The studies reveal the existence of channel-length modulation and drain-induced barrier lowering for gate lengths below 1 {\mu}m, with a characteristic behavior comparable to semiconducting devices. With the fabrication of field-effect transistors with gate lengths as small as 60 nm the results demonstrate the possibility to fabricate by electron-beam lithography functional devices based on complex oxides with characteristic lengths of several ten nanometers.