Nano-scale strain engineering of graphene and graphene-based devices

TL;DR

This paper explores how nano-scale strain engineering can modify the electronic properties of graphene, demonstrating both theoretical foundations and experimental evidence for strain-induced effects, and discussing potential device applications.

Contribution

It provides a comprehensive theoretical and experimental analysis of strain effects in graphene, highlighting the feasibility of nanoscale strain engineering for electronic device optimization.

Findings

Strain induces pseudo-magnetic fields in graphene.

Experimental evidence of charge effects due to strain.

Simulations show potential for device applications.

Abstract

Structural distortions in nano-materials can induce dramatic changes in their electronic properties. This situation is well manifested in graphene, a two-dimensional honeycomb structure of carbon atoms with only one atomic layer thickness. In particular, strained graphene can result in both charging effects and pseudo-magnetic fields, so that controlled strain on a perfect graphene lattice can be tailored to yield desirable electronic properties. Here we describe the theoretical foundation for strain-engineering of the electronic properties of graphene, and then provide experimental evidences for strain-induced pseudo-magnetic fields and charging effects in monolayer graphene. We further demonstrate the feasibility of nanoscale strain engineering for graphene-based devices by means of theoretical simulations and nano-fabrication technology.