Endurance Write Speed Tradeoffs in Nonvolatile Memories

TL;DR

This paper develops a phenomenological model to describe the tradeoff between endurance and write speed in nonvolatile memories with thermally activated switching, predicting specific dependencies supported by experimental data.

Contribution

It introduces a new model linking endurance and write time in nonvolatile memories, providing predictions validated by experimental observations.

Findings

Endurance scales linearly to cubically with write time in certain memories.

Model predictions align with experimental data on metal-oxide thin films.

Provides insights into optimizing memory performance and longevity.

Abstract

We derive phenomenological model for endurance-write time switching tradeoff for nonvolatile memories with thermally activated switching mechanisms. The model predicts linear to cubic dependence of endurance on write time for metal oxide memristors and flash memories, which is partially supported by experimental data for the breakdown of metal-oxide thin films.