Nanomaterials of the topological crystalline insulators, Pb_(1-x)Sn_(x)Te and Pb_(1-x)Sn_(x)Se

TL;DR

This paper reports optimized methods for growing high-quality bulk crystals and nanowires of topological crystalline insulators Pb_(1-x)Sn_(x)Te and Pb_(1-x)Sn_(x)Se, with detailed characterization of their structural properties.

Contribution

It introduces improved growth procedures for TCIs and demonstrates nanowire synthesis using VLS, advancing the fabrication of topological nanomaterials.

Findings

Nanowires of Pb_(1-x)Sn_(x)Te with x ≈ 0.25 were successfully produced.

Detailed structural characterization confirms high-quality crystal and nanowire growth.

The study provides insights into the transition from trivial to non-trivial insulator states.

Abstract

Topological insulators (TIs) and topological crystal insulators (TCIs) exhibit exotic surface properties. We present optimised growth procedures to obtain high quality bulk crystals of the TCIs Pb_(1-x)Sn_(x)Te and Pb_(1-x)Sn_(x)Se, and nanowires from the bulk crystals using the vapour-liquid-solid (VLS) technique. Nanowires of Pb_(1-x)Sn_(x)Te have been produced with a Sn composition of approx. x = 0.25, at which a transition from trivial to non-trivial insulator is reported. The results obtained on the growth of nanomaterials of Pb_(1-x)Sn_(x)Se are also described. Detailed characterisation of the bulk crystals and the nanomaterials through x-ray diffraction, microscopy techniques and EDX analysis are presented.