The effect of anode emitter injection capability on characteristics of hybrid SIT-MOS transistors

TL;DR

This paper investigates optimizing high voltage hybrid SIT-MOS transistors by reducing anode emitter injection capability, demonstrating a potential 30-40% reduction in turn-off energy losses through simulation.

Contribution

It shows that methods used for IGBT optimization are effective for HSMT, reducing energy losses and outperforming trench IGBTs under similar conditions.

Findings

Turn-off energy losses reduced by 30-40%

Optimized HSMT has 15-35% less energy loss than trench IGBT

Methods are physically equivalent for different transistor types

Abstract

The possibility of optimization of high voltage hybrid SIT-MOS transistors (HSMT) by local reduction of the lifetime near anode emitter and/or reduction of the anode emitter injection ability by three different ways has been investigated using two-dimensional numerical simulation. It has been shown that all of these methods proposed previously for optimization of insulated-gate bipolar transistor (IGBT) are physically equivalent and makes it possible to reduce turn-off energy losses $E_{off}$ in HSMT by 30-40%. Importantly that energy $E_{off}$ in optimized HSMT appears to be 15-35% less than in equivalent trench IGBT under other equal conditions.