Direct Transition Resonance in Atomically Uniform Topological Sb(111) Thin Films

TL;DR

This study demonstrates the fabrication of atomically uniform Sb(111) thin films with well-resolved topological and quantum well states, revealing direct transition resonances that connect these states in momentum space through experimental and theoretical analysis.

Contribution

It introduces a comprehensive model combining first-principles calculations and experimental data to explain direct transition resonances in topological Sb(111) films.

Findings

Observation of direct transition resonances varying with photon energy.

Topological surface states are connected to quantum well states in momentum space.

Experimental results align with the theoretical model.

Abstract

Atomically uniform Sb(111) films are fabricated by the method of molecular beam epitaxy on an optimized Si(111) surface. Two dimensional quantum well states and topological surface states in these films are well resolved as measured by angle-resolved photoemission spectroscopy. We observe an evolution of direct transition resonances by varying the excitation photon energy (and thus the perpendicular crystal momentum). The experimental results are reproduced in a comprehensive model calculation taking into account first-principles calculated initial states and time-reversed low-energy-electron-diffraction final states in the photoexcitation process. The resonant behavior illustrates that the topological surface states and the quantum well states are analytically connected in momentum space in all three dimensions.