Semiclassical electron transport at the edge of a 2D topological insulator: Interplay of protected and unprotected modes
E. Khalaf, M. A. Skvortsov, P. M. Ostrovsky

TL;DR
This paper investigates how topologically protected and unprotected edge modes influence electron transport in disordered 2D topological insulators, revealing suppression of diffusion and shot noise due to topological effects.
Contribution
It introduces a sigma model approach to analyze transmission probabilities in topological insulator edges, highlighting the impact of protected modes on transport properties.
Findings
Protected modes suppress diffusion in unprotected channels.
Formation of a gap near perfect transmission reduces shot noise.
Weak effects in quantum spin Hall systems with fewer protected channels.
Abstract
We study electron transport at the edge of a generic disordered two-dimensional topological insulator, where some channels are topologically protected from backscattering. Assuming the total number of channels is large, we consider the edge as a quasi-one-dimensional quantum wire and describe it in terms of a non-linear sigma model with a topological term. Neglecting localization effects, we calculate the average distribution function of transmission probabilities as a function of the sample length. We mainly focus on the two experimentally relevant cases: a junction between two quantum Hall (QH) states with different filling factors (unitary class) and a relatively thick quantum well exhibiting quantum spin Hall (QSH) effect (symplectic class). In a QH sample, the presence of topologically protected modes leads to a strong suppression of diffusion in the other channels already at the…
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