Effect of temperature on In_x Ga_(1-x) As/GaAs quantum dot lasing

TL;DR

This study investigates how temperature influences the electronic properties and wavelength emission of pyramidal In_x Ga_(1-x) As/GaAs quantum dot lasers, revealing non-linear effects on band gap and emission wavelength.

Contribution

It provides a detailed analysis of temperature effects on strain, band-edge, and energy levels in quantum dot lasers using a 1-band effective mass approach.

Findings

Temperature does not significantly affect strain tensor.

Band gap decreases and emission wavelength elongates with rising temperature.

Band gap and laser energy decrease non-linearly with temperature.

Abstract

In this paper, the strain, band-edge, and energy levels of pyramidal In_x Ga_(1-x) As/GaAs quantum dot lasers (QDLs) are investigated by 1-band effective mass approach. It is shown that while temperature has no remarkable effect on the strain tensor, the band gap lowers and the radiation wavelength elongates by rising temperature. Also, band-gap and laser energy do not linearly decrease by temperature rise. Our results appear to coincide with former researches. Keywords: quantum dot laser, strain tensor, band edge, nano-electronics, temperature effect