Quantum interference effects in chemical vapor deposited graphene

TL;DR

This paper investigates quantum interference effects in CVD-grown graphene, revealing a crossover between weak localization and antilocalization, and analyzing scattering mechanisms to inform future quantum device applications.

Contribution

It provides detailed measurements of quantum interference phenomena and scattering lengths in CVD graphene, offering new insights into its quantum transport properties.

Findings

Observation of crossover between weak localization and antilocalization

Measurement of phase coherence and scattering lengths

Analysis of temperature- and gate-dependent quantum effects

Abstract

We report several quantum interference effects in graphene grown by chemical vapor deposition. A crossover between weak localization and weak antilocalization effects is observed when varying the gate voltage and we discuss the underlying scattering mechanisms. The characteristic length scale for phase coherence is compared with that estimated from universal conductance fluctuations in the microporeformed graphene sample. These extensive temperature- and gate-dependent measurements of the intervalley and intravalley scattering lengths provide important and useful insight for the macroscopic applications of graphene-based quantum devices.