Degenerate epitaxy-driven defects in monolayer silicon oxide onto ruthenium

TL;DR

This study reveals the atomic structure and defect formation in monolayer silicon oxide grown on ruthenium, highlighting the coexistence of ordered oxygen lattices and the need for improved synthesis methods for defect-free 2D oxides.

Contribution

It uncovers the atomic-scale structure and defect mechanisms of monolayer silicon oxide on ruthenium using advanced microscopy and calculations, revealing degenerate epitaxial relationships.

Findings

Ordered oxygen lattice coexists with silicon oxide monolayer

Defects occur at domain boundaries due to degenerate epitaxial relationships

Displacive transformation from oxygen reconstructed Ru(0001) observed

Abstract

The structure of the ultimately-thin crystalline allotrope of silicon oxide, prepared onto a ruthenium surface, is unveiled down to atomic scale with chemical sensitivity, thanks to high resolution scanning tunneling microscopy and first principle calculations. An ordered oxygen lattice is imaged which coexists with the two-dimensional monolayer oxide. This coexistence signals a displacive transformation from an oxygen reconstructed-Ru(0001) to silicon oxide, along which latterally-shifted domains form, each with equivalent and degenerate epitaxial relationships with the substrate. The unavoidable character of defects at boundaries between these domains appeals for the development of alternative methods capable of producing single-crystalline two-dimensional oxides.