Role of different scattering mechanisms on the temperature dependence of transport in graphene

TL;DR

This paper investigates how various scattering mechanisms influence the temperature-dependent electrical transport in graphene, revealing that impurity screening and mobility levels determine dominant scattering processes.

Contribution

It provides a combined experimental and theoretical analysis of scattering effects on graphene's transport properties across different mobility regimes.

Findings

High mobility devices are mainly affected by short-range impurity scattering.

Low mobility devices are influenced by both long-range and short-range scattering.

Transport behavior can be explained using Boltzmann transport equations with two scattering mechanisms.

Abstract

Detailed experimental and theoretical studies of the temperature dependence of the effect of different scattering mechanisms on electrical transport properties of graphene devices are presented. We find that for high mobility devices the transport properties are mainly governed by completely screened short range impurity scattering. On the other hand, for the low mobility devices transport properties are determined by both types of scattering potentials - long range due to ionized impurities and short range due to completely screened charged impurities. The results could be explained in the framework of Boltzmann transport equations involving the two independent scattering mechanisms.