Racah materials: role of atomic multiplets in intermediate valence systems
A. B. Shick, L. Havela, A. I. Lichtenstein, M. I. Katsnelson

TL;DR
This paper investigates the electronic structure of intermediate valence compounds SmB₆ and PuB₆, revealing their singlet ground states and the importance of atomic multiplet effects in their insulating behavior and potential topological properties.
Contribution
It introduces a combined LDA and exact diagonalization approach to elucidate the atomic multiplet role in the ground state of Racah materials like SmB₆ and PuB₆, highlighting their Kondo-like singlet states.
Findings
SmB₆ has a singlet ground state with a 5.6 f-electron occupation.
The band gap in SmB₆ is increased and becomes indirect due to electron correlations.
PuB₆ also exhibits a similar intermediate valence singlet ground state.
Abstract
We address the long-standing mystery of the nonmagnetic insulating state of the intermediate valence compound SmB. Within a combination of the local density approximation (LDA) and an exact diagonalization (ED) of an effective discrete Anderson impurity model, the intermediate valence ground state with the -shell occupation is found for the Sm atom in SmB. This ground state is a singlet, and the first excited triplet state meV higher in the energy. SmB is a narrow band insulator already in LDA, with the direct band gap of meV. The electron correlations increase the band gap which now becomes indirect. Thus, the many-body effects are relevant to form the indirect band gap, crucial for the idea of ``topological Kondo insulator" in SmB. Also, an actinide analog PuB is considered, and the intermediate valence singlet…
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