Quantum capacitance in monolayers of silicene and related buckled materials

TL;DR

This paper theoretically investigates quantum capacitance in silicene and related buckled 2D materials, highlighting their potential for spintronic and valleytronic applications due to their unique electronic properties.

Contribution

It provides a theoretical model of quantum capacitance considering electron-hole puddles, offering insights beyond traditional transport measurement methods.

Findings

Quantum capacitance depends on Fermi energy and temperature.

Electron-hole puddles significantly influence quantum capacitance.

Results suggest potential for spintronic and valleytronic device development.

Abstract

Silicene and related buckled materials are distinct from both the conventional two dimensional electron gas and the famous graphene due to strong spin orbit coupling and the buckled structure. These materials have potential to overcome limitations encountered for graphene, in particular the zero band gap and weak spin orbit coupling. We present a theoretical realization of quantum capacitance which has advantages over the scattering problems of traditional transport measurements. We derive and discuss quantum capacitance as a function of the Fermi energy and temperature taking into account electron-hole puddles through a Gaussian broadening distribution. Our predicted results are very exciting and pave the way for future spintronic and valleytronic devices.